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| PD- 91844B IRF7210 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 2 3 4 8 7 A D D D D S S G VDSS = -12V RDS(on) = 0.007 6 5 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Junction and Storage Temperature Range Max. -12 16 12 100 2.5 1.6 0.02 12 16 -55 to + 150 Units V A W W/C V V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 10/19/04 IRF7210 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -14 -12 --- --- -0.6 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- 0.011 .005 .007 --- --- --- --- --- --- --- 212 27 52 50 3.0 6.5 30 17179 9455 8986 Max. Units Conditions --- V VGS = 0V, ID = -5.0mA --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA .007 VGS = -4.5V, ID = -16A .010 VGS = -2.5V, ID = -12A --- V VDS = VGS, ID = -500A --- S VDS = -10V, ID = -16A -10 VDS = -12V, VGS = 0V -1.0 VDS = -9.6V, VGS = 0V A -100 VDS = -12V, VGS = 0V, TJ = 70C -100 nA VGS = -12V 100 VGS = 12V --- ID = -10A --- nC VDS = -10V --- VGS = -5.0V --- ns VDD = -10V --- ID = -10A s --- RD = 1.0 --- RG = 6.2 --- VGS = 0V --- pF VDS = -10V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 165 296 -2.5 A -100 -1.2 247 444 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 85A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7210 20 VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -0.8V TOP 300s PULSE WIDTH TJ = 25C 16 16 -I , Drain-to-Source Current (A) D -I , Drain-to-Source Current (A) D 12 VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -0.8V TOP 300s PULSE WIDTH TJ = 150C 12 8 8 4 4 0 0 2 4 6 8 -0.8V -0.8V A 0 0 2 4 6 8 A 10 10 -VDS , Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 140 2.0 120 TJ = 25C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -16A -ID , Drain-to-Source Current (A) 1.5 80 60 TJ = 150C 1.0 40 0.5 20 0 0.0 2.0 V DS = -10V 300s PULSE WIDTH 4.0 6.0 8.0 A 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -V GS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7210 24000 -V , Gate-to-Source Voltage (V) GS V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd 10 I D = -10A VDS = -12V 8 C, Capacitance (pF) 20000 Ciss 16000 6 4 12000 Coss Crss 8000 0 2 4 6 8 10 12 2 A 0 0 50 100 150 200 250 300 A -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 RDS(on) , Drain-to-Source On Resistance ( ) -ID , Drain Current (A) I 1000 -I SD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 25C TJ = 150C 100 100us 1ms 10 10 10ms 1 0.0 2.0 4.0 6.0 VGS = 0V 8.0 A 10.0 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -V SD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area. 4 www.irf.com IRF7210 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 1 0.1 0.001 t1, Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7210 SO-8 Package Details D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A A1 B M AM 5 8 E -A- 7 6 5 H 0.25 (.010) 1 2 3 4 C D E e e1 H K e 6X e1 A K x 45 .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 -CB 8X 0.25 (.010) NOTES: 1. 2. 3. 4. A1 M CASBS 0.10 (.004) L 8X 6 C 8X L RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 6 www.irf.com IRF7210 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 www.irf.com 7 |
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